AN822
Vishay Siliconix
105
130
Spreading Copper (s q . in.)
120
Spreading Copper (s q . in.)
95
110
8 5
75
100
90
8 0
65
100 %
70
50 %
100 %
55
50 %
60
0 %
0 %
45
50
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
Figure 5. Spreading Copper - Si7401DN
CONCLUSIONS
As a derivative of the PowerPAK SO-8, the PowerPAK
1212-8 uses the same packaging technology and has
been shown to have the same level of thermal perfor-
mance while having a footprint that is more than 40 %
smaller than the standard TSSOP-8.
Recommended PowerPAK 1212-8 land patterns are
provided to aid in PC board layout for designs using this
new package.
www.vishay.com
4
Figure 6. Spreading Copper - Junction-to-Ambient Performance
The PowerPAK 1212-8 combines small size with attrac-
tive thermal characteristics. By minimizing the thermal
rise above the board temperature, PowerPAK simplifies
thermal design considerations, allows the device to run
cooler, keeps r DS(ON) low, and permits the device to
handle more current than a same- or larger-size MOS-
FET die in the standard TSSOP-8 or SO-8 packages.
Document Number 71681
03-Mar-06
相关PDF资料
SI7625DN-T1-GE3 MOSFET P-CH D-S 30V 1212-8 PPAK
SI7629DN-T1-GE3 MOSFET P-CH 20V 1212-8 PPAK
SI7634BDP-T1-E3 MOSFET N-CH D-S 30V PPAK 8SOIC
SI7636DP-T1-GE3 MOSFET N-CH D-S 30V PPAK 8SOIC
SI7655DN-T1-GE3 MOSFET P-CH 20V D-S PPAK 1212
SI7658ADP-T1-GE3 MOSFET N-CH 30V 60A PPAK 8SOIC
SI7682DP-T1-GE3 MOSFET N-CH D-S 30V PPAK 8SOIC
SI7726DN-T1-GE3 MOSFET N-CH 30V 35A 1212-8
相关代理商/技术参数
SI7621DN-T1-GE3 功能描述:MOSFET P-CH 20V 1212-8 PPAK RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:TrenchFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds(最大)@ Id, Vgs @ 25° C:180 毫欧 @ 9A,10V Id 时的 Vgs(th)(最大):4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
SI7623DN-T1-GE3 功能描述:MOSFET -20V 3.8mOhm@10V 35A P-Ch G-III RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI7625DN 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:P-Channel 30 V (D-S) MOSFET
SI7625DN-T1-GE3 功能描述:MOSFET -30V 7mOhm@10V 35A P-Ch G-III RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI7629DN 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:P-Channel 20 V (D-S) MOSFET
SI7629DN-T1-GE3 功能描述:MOSFET 20V 35A 52W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI7633DP-T1-GE3 功能描述:MOSFET 20V 60A 104W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI7634BDP 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) MOSFET